N02L6181A
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx16 bit
Overview
The N02L6181A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor ’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as ON
Semiconductor ’s N02L63W3A, which is processed
to operate at higher voltages. The device operates
with a single chip enable (CE) control and output
enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and
lower bytes to be accessed independently. The
N02L6181A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40 o C to
+85 o C and is available in JEDEC standard
packages compatible with other standard 128Kb x
16 SRAMs.
Product Family
Features
? Single Wide Power Supply Range
1.65 to 2.2 Volts
? Very low standby current
0.5μA at 1.8V (Typical)
? Very low operating current
1.4mA at 1.8V and 1μs (Typical)
? Very low Page Mode operating current
0.5mA at 1.8V and 1μs (Typical)
? Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
? Low voltage data retention
Vcc = 1.2V
? Very fas t output enable access time
30ns OE access time
? Automatic power down to standby mode
? TTL compatible three-state output driver
? Compact space saving BGA package
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby Operating
Current (I SB ), Current (Icc),
Max Max
N02L6181AB
N02L6181AB2
48 - BGA
Green 48-BGA
-40 o C to +85 o C 1.65V - 2.2V
70 and 85ns
@ 1.65V
10 μ A
3 mA @ 1MHz
?2008 SCILLC. All rights reserved.
July 2008 - Rev. 4
Publication Order Number:
N02L6181A/D
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相关代理商/技术参数
N02L6181AB27IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
N02L6181AB28I 功能描述:静态随机存取存储器 2MB 1.8V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
N02L6181AB28IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
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N02L6181AB7IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
N02L6181AB8I 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
N02L6181AB8IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
N02L63W2A 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit